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Infineon Technologies BAS1603WE6327HTSA1
DIODE GEN PURP 80V 250MA SOD323
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 88180
- Description
- DIODE GEN PURP 80V 250MA SOD323
Product Details
- Reverse Recovery Time (trr)
- 500ns
- Current - Reverse Leakage @ Vr
- 5µA @ 1000V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 1000V
- Series
- -
- Current - Average Rectified (Io)
- 1A
- Packaging
- Cut Tape (CT)
- Operating Temperature - Junction
- -65°C ~ 125°C
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 1.3V @ 1A
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- DO-204AL, DO-41, Axial
- Base Part Number
- BA159
- Capacitance @ Vr, F
- 12pF @ 4V, 1MHz
- Supplier Device Package
- DO-204AL (DO-41)