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Infineon Technologies BSC027N04LSGATMA1
MOSFET N-CH 40V 100A TDSON-8
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.6
- Stock
- 169145
Product Details
- Rds On (Max) @ Id, Vgs
- 4.5mOhm @ 15A, 10V
- Series
- TrenchFET® Gen IV
- Power Dissipation (Max)
- 57W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® 1212-8S (3.3x3.3)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 37nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1710pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8S
- Vgs(th) (Max) @ Id
- 3.6V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)