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Infineon Technologies BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 77574
Product Details
- Rds On (Max) @ Id, Vgs
- 10Ohm @ 150mA, 5V
- Series
- TrenchMOS™
- Power Dissipation (Max)
- 830mW (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-236AB
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 100V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 40pF @ 10V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 190mA (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Operating Temperature
- 150°C (TJ)