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Infineon Technologies BSZ110N06NS3GATMA1
MOSFET N-CH 60V 20A TSDSON-8
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 35687
Product Details
- Packaging
- Cut Tape (CT)
- Supplier Device Package
- TO-92-3
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 7.7nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 800V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 160pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 300mA (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number
- STQ1
- Vgs(th) (Max) @ Id
- 4.5V @ 50µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- SuperMESH™
- Rds On (Max) @ Id, Vgs
- 16Ohm @ 500mA, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 3W (Tc)