Images are for reference only. See Product Specifications for product details
Infineon Technologies F3L200R12W2H3B11BPSA1
IGBT MODULE VCES 650V 200A
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT MODULE VCES 650V 200A
Product Details
- Part Status
- Active
- Voltage - Collector Emitter Breakdown (Max)
- 1700V
- Power - Max
- 620W
- Configuration
- Half Bridge
- Mounting Type
- Chassis Mount
- NTC Thermistor
- No
- Package / Case
- S-3 Module
- Operating Temperature
- -40°C ~ 125°C (TJ)
- Supplier Device Package
- S3
- Vce(on) (Max) @ Vge, Ic
- 2.45V @ 15V, 100A
- Input
- Standard
- Current - Collector (Ic) (Max)
- 150A
- Series
- -
- Input Capacitance (Cies) @ Vce
- 9nF @ 25V
- IGBT Type
- Trench Field Stop
- Current - Collector Cutoff (Max)
- 3mA