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Infineon Technologies FD200R12PT4B6BOSA1

IGBT MODULE VCES 1200V 200A

Manufacturer
Infineon Technologies
Datasheet
Price
0.2
Stock
10000
Description
IGBT MODULE VCES 1200V 200A

Product Details

Power - Max
1250W
Configuration
Half Bridge
Mounting Type
Chassis Mount
NTC Thermistor
No
Package / Case
D-3 Module
Operating Temperature
-40°C ~ 150°C (TJ)
Supplier Device Package
D3
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 200A
Input
Standard
Current - Collector (Ic) (Max)
400A
Series
-
Input Capacitance (Cies) @ Vce
17nF @ 25V
IGBT Type
Trench Field Stop
Current - Collector Cutoff (Max)
5mA
Part Status
Active
Voltage - Collector Emitter Breakdown (Max)
1700V