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Infineon Technologies IDB09E60ATMA1
DIODE GEN PURP 600V 19.3A TO263
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURP 600V 19.3A TO263
Product Details
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Capacitance @ Vr, F
- -
- Supplier Device Package
- PG-TO252-3
- Reverse Recovery Time (trr)
- 75ns
- Current - Reverse Leakage @ Vr
- 50µA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 19.3A (DC)
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 2V @ 9A
- Diode Type
- Standard
- Part Status
- Obsolete
- Mounting Type
- Surface Mount