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Infineon Technologies IDB15E60ATMA1
DIODE GEN PURP 600V 29.2A TO263
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.05
- Stock
- 100
- Description
- DIODE GEN PURP 600V 29.2A TO263
Product Details
- Supplier Device Package
- DO-214AB
- Reverse Recovery Time (trr)
- 60ns
- Current - Reverse Leakage @ Vr
- 10µA @ 800V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 800V
- Series
- -
- Current - Average Rectified (Io)
- 3A
- Packaging
- Tape & Reel (TR)
- Operating Temperature - Junction
- -55°C ~ 175°C
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 1.2V @ 3A
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-214AB, SMC
- Base Part Number
- UFS380
- Capacitance @ Vr, F
- -