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Infineon Technologies IDC04S60CEX7SA1

DIODE GEN PURPOSE SAWN WAFER

Manufacturer
Infineon Technologies
Datasheet
Price
0.2
Stock
10000
Description
DIODE GEN PURPOSE SAWN WAFER

Product Details

Current - Reverse Leakage @ Vr
5µA @ 100V
Voltage - DC Reverse (Vr) (Max)
100V
Current - Average Rectified (Io)
1A
Speed
Standard Recovery >500ns, > 200mA (Io)
Operating Temperature - Junction
-65°C ~ 175°C
Series
-
Voltage - Forward (Vf) (Max) @ If
1.1V @ 1A
Packaging
Bulk
Diode Type
Standard
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Capacitance @ Vr, F
-
Supplier Device Package
DO-41