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Infineon Technologies IDC08S120EX1SA3
DIODE SCHOTTKY 1.2KV 7.5A WAFER
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- DIODE SCHOTTKY 1.2KV 7.5A WAFER
Product Details
- Supplier Device Package
- Sawn on foil
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 180µA @ 1200V
- Voltage - DC Reverse (Vr) (Max)
- 1200V
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 7.5A (DC)
- Series
- CoolSiC™+
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Bulk
- Voltage - Forward (Vf) (Max) @ If
- 1.8V @ 7.5A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Capacitance @ Vr, F
- 380pF @ 1V, 1MHz