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Infineon Technologies IDC08S60CEX7SA1
DIODE GEN PURPOSE SAWN WAFER
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURPOSE SAWN WAFER
Product Details
- Current - Reverse Leakage @ Vr
- 5pA @ 5V
- Voltage - DC Reverse (Vr) (Max)
- 20V
- Speed
- Small Signal =< 200mA (Io), Any Speed
- Current - Average Rectified (Io)
- 50mA (DC)
- Series
- -
- Operating Temperature - Junction
- -65°C ~ 125°C
- Packaging
- Tray
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 10mA
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Capacitance @ Vr, F
- 1.3pF @ 0V, 1MHz
- Supplier Device Package
- Die
- Reverse Recovery Time (trr)
- 600ns