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Infineon Technologies IDP08E65D2XKSA1
DIODE GEN PURP 650V 8A TO220-2
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.56
- Stock
- 390
- Description
- DIODE GEN PURP 650V 8A TO220-2
Product Details
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number
- VB30100S
- Capacitance @ Vr, F
- -
- Supplier Device Package
- TO-263AB
- Current - Reverse Leakage @ Vr
- 1mA @ 100V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 30A
- Series
- TMBS®
- Operating Temperature - Junction
- -40°C ~ 150°C
- Packaging
- Tube
- Voltage - Forward (Vf) (Max) @ If
- 910mV @ 30A