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Infineon Technologies IPA60R190C6XKSA1
MOSFET N-CH 600V 20.2A TO220-FP
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 2.8
- Stock
- 478
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3500pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9.2A (Ta), 53A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 19.5mOhm @ 30A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 3.1W (Ta), 104.2W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- TO-220AB
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 115nC @ 10V