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Infineon Technologies IPB039N10N3GATMA1
MOSFET N-CH 100V 160A TO263-7
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 2000
Product Details
- FET Type
- N-Channel
- Power Dissipation (Max)
- 176W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-220
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 100nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 80V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 5955pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-220-3
- Base Part Number
- STP100
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Series
- STripFET™ F6
- Rds On (Max) @ Id, Vgs
- 9mOhm @ 50A, 10V