Infineon Technologies IPD110N12N3GATMA1

Product Details

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1450pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

117mOhm @ 14A, 10V

Series

HEXFET®

Power Dissipation (Max)

3.1W (Ta), 110W (Tc)

FET Type

P-Channel

Supplier Device Package

D2PAK