Infineon Technologies IPD25N06S4L30ATMA2

Product Details

FET Type

P-Channel

Supplier Device Package

8-SO

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3007pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

16.1A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

15mOhm @ 10.2A, 10V

Series

TrenchFET®

Power Dissipation (Max)

2.5W (Ta), 6.3W (Tc)