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Infineon Technologies IPD90N10S4L06ATMA1

MOSFET N-CH TO252-3

Manufacturer
Infineon Technologies
Datasheet
Price
0
Stock
9961

Product Details

Package / Case
TO-220-3
Base Part Number
STP16N
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Series
STripFET™ II
Rds On (Max) @ Id, Vgs
100mOhm @ 8A, 10V
FET Type
N-Channel
Power Dissipation (Max)
45W (Tc)
Packaging
Tube
Supplier Device Package
TO-220AB
Vgs (Max)
±20V
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
315pF @ 25V
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
10V