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Infineon Technologies IRD3CH5DB6
DIODE GEN PURP 1.2KV 5A DIE
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- DIODE GEN PURP 1.2KV 5A DIE
Product Details
- Series
- -
- Operating Temperature - Junction
- -40°C ~ 150°C
- Packaging
- Bulk
- Voltage - Forward (Vf) (Max) @ If
- 2.7V @ 150A
- Diode Type
- Standard
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Capacitance @ Vr, F
- -
- Supplier Device Package
- Die
- Reverse Recovery Time (trr)
- 355ns
- Current - Reverse Leakage @ Vr
- 3µA @ 1200V
- Voltage - DC Reverse (Vr) (Max)
- 1200V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 150A