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Infineon Technologies IRD3CH82DF6

DIODE CHIP EMITTER CONTROLLED

Manufacturer
Infineon Technologies
Datasheet
Price
0.2
Stock
10000
Description
DIODE CHIP EMITTER CONTROLLED

Product Details

Supplier Device Package
Die
Reverse Recovery Time (trr)
154ns
Current - Reverse Leakage @ Vr
200nA @ 1200V
Voltage - DC Reverse (Vr) (Max)
1200V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io)
10A
Series
-
Operating Temperature - Junction
-40°C ~ 150°C
Packaging
Bulk
Voltage - Forward (Vf) (Max) @ If
2.7V @ 10A
Diode Type
Standard
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
Die
Capacitance @ Vr, F
-