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Infineon Technologies IRF7106
MOSFET N/P-CH 20V 3A/2.5A 8-SOIC
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs
- 300mOhm @ 1.5A, 10V
- Supplier Device Package
- 8-SO
- Gate Charge (Qg) (Max) @ Vgs
- 6.6nC @ 10V
- Series
- HEXFET®
- Drain to Source Voltage (Vdss)
- 50V
- FET Type
- 2 N-Channel (Dual)
- Input Capacitance (Ciss) (Max) @ Vds
- 120pF @ 25V
- Packaging
- Tube
- Current - Continuous Drain (Id) @ 25°C
- 2A
- FET Feature
- Standard
- Part Status
- Obsolete
- Power - Max
- 2W
- Mounting Type
- Surface Mount