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Infineon Technologies MMBD914LT3HTMA1
DIODE GEN PURP 100V 250MA SOT23
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- DIODE GEN PURP 100V 250MA SOT23
Product Details
- Supplier Device Package
- P-TO252-3
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 200µA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 4A (DC)
- Series
- CoolSiC™+
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 1.9V @ 4A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Capacitance @ Vr, F
- 150pF @ 0V, 1MHz