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Infineon Technologies SIDC03D120F6X1SA1

DIODE GEN PURP 1.2KV 2A WAFER

Manufacturer
Infineon Technologies
Datasheet
Price
0.2
Stock
10000
Description
DIODE GEN PURP 1.2KV 2A WAFER

Product Details

Package / Case
Die
Capacitance @ Vr, F
-
Supplier Device Package
Sawn on foil
Current - Reverse Leakage @ Vr
27µA @ 600V
Voltage - DC Reverse (Vr) (Max)
600V
Current - Average Rectified (Io)
3A (DC)
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction
-40°C ~ 150°C
Series
-
Voltage - Forward (Vf) (Max) @ If
1.6V @ 3A
Packaging
Bulk
Diode Type
Standard
Part Status
Discontinued at Digi-Key
Mounting Type
Surface Mount