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Infineon Technologies SIDC08D120H6X1SA1
DIODE GEN PURP 1.2KV 10A WAFER
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURP 1.2KV 10A WAFER
Product Details
- Capacitance @ Vr, F
- -
- Supplier Device Package
- Sawn on foil
- Reverse Recovery Time (trr)
- 150ns
- Current - Reverse Leakage @ Vr
- 27µA @ 600V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Series
- -
- Current - Average Rectified (Io)
- 20A (DC)
- Packaging
- Bulk
- Operating Temperature - Junction
- -55°C ~ 150°C
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 1.7V @ 20A
- Part Status
- Discontinued at Digi-Key
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Base Part Number
- SIDC09D60