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Infineon Technologies SIDC161D170HX1SA2
DIODE GEN PURP 1.7KV 300A WAFER
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- DIODE GEN PURP 1.7KV 300A WAFER
Product Details
- Current - Reverse Leakage @ Vr
- 200µA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 5A (DC)
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Bulk
- Voltage - Forward (Vf) (Max) @ If
- 1.7V @ 5A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Discontinued at Digi-Key
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Capacitance @ Vr, F
- 170pF @ 1V, 1MHz
- Supplier Device Package
- Sawn on foil
- Reverse Recovery Time (trr)
- 0ns