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Infineon Technologies SIDC23D120H8X1SA1
DIODE GEN PURP 1.2KV 35A WAFER
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 3.84
- Stock
- 100
- Description
- DIODE GEN PURP 1.2KV 35A WAFER
Product Details
- Capacitance @ Vr, F
- -
- Supplier Device Package
- DO-35
- Current - Reverse Leakage @ Vr
- 25nA @ 30V
- Voltage - DC Reverse (Vr) (Max)
- 30V
- Current - Average Rectified (Io)
- 200mA
- Speed
- Small Signal =< 200mA (Io), Any Speed
- Operating Temperature - Junction
- -65°C ~ 200°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 100mA
- Packaging
- Bulk
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- DO-204AH, DO-35, Axial