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Infineon Technologies SIDC30D120H8X1SA4

DIODE GEN PURP 1.2KV 50A WAFER

Manufacturer
Infineon Technologies
Datasheet
Price
5.11
Stock
100
Description
DIODE GEN PURP 1.2KV 50A WAFER

Product Details

Current - Reverse Leakage @ Vr
25µA @ 50V
Voltage - DC Reverse (Vr) (Max)
800V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io)
6A
Series
-
Operating Temperature - Junction
-65°C ~ 150°C
Packaging
Bulk
Voltage - Forward (Vf) (Max) @ If
1.4V @ 6A
Diode Type
Standard, Reverse Polarity
Part Status
Active
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AA, DO-4, Stud
Capacitance @ Vr, F
-
Supplier Device Package
DO-4
Reverse Recovery Time (trr)
500ns