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Infineon Technologies SIGC109T120R3LEX1SA2
IGBT 1200V 100A DIE
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT 1200V 100A DIE
Product Details
- Package / Case
- TO-247-3
- Test Condition
- 850V, 21A, 1Ohm, 15V
- Base Part Number
- IXB*42N170
- Switching Energy
- 3.43mJ (on), 430µJ (off)
- Series
- BIMOSFET™
- Td (on/off) @ 25°C
- 19ns/200ns
- IGBT Type
- -
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Packaging
- Tube
- Supplier Device Package
- TO-247AD (IXBH)
- Input Type
- Standard
- Vce(on) (Max) @ Vge, Ic
- 6V @ 15V, 21A
- Gate Charge
- 188nC
- Reverse Recovery Time (trr)
- 330ns
- Part Status
- Active
- Current - Collector (Ic) (Max)
- 42A
- Power - Max
- 357W
- Current - Collector Pulsed (Icm)
- 265A
- Mounting Type
- Through Hole
- Voltage - Collector Emitter Breakdown (Max)
- 1700V