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IXYS IXFH34N65X2
MOSFET N-CH 650V 34A TO-247
- Manufacturer
- IXYS
- Datasheet
- Price
- 6.04
- Stock
- 55
- Description
- MOSFET N-CH 650V 34A TO-247
Product Details
- Rds On (Max) @ Id, Vgs
- 160mOhm @ 11A, 10V
- Series
- HiPerFET™
- Power Dissipation (Max)
- 390W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 38nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2310pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 22A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 5.5V @ 1.5mA
- Operating Temperature
- -55°C ~ 150°C (TJ)