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IXYS IXFN60N80P
MOSFET N-CH 800V 53A SOT-227B
- Manufacturer
- IXYS
- Datasheet
- Price
- 27.12
- Stock
- 161
Product Details
- Series
- C3M™
- Power Dissipation (Max)
- 149W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247-4
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 87nC @ 15V
- Vgs (Max)
- +15V, -4V
- Drain to Source Voltage (Vdss)
- 900V
- Technology
- SiCFET (Silicon Carbide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1864pF @ 600V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 63A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 15V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-4
- Vgs(th) (Max) @ Id
- 3.5V @ 11mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 39mOhm @ 35A, 15V