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IXYS IXFT7N90Q
MOSFET N-CH 900V 7A TO-268
- Manufacturer
- IXYS
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 900V 7A TO-268
Product Details
- Series
- TrenchP™
- Power Dissipation (Max)
- 1040W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PLUS247™-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 740nC @ 10V
- Vgs (Max)
- ±15V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 69500pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 210A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.5mOhm @ 105A, 10V