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IXYS IXFT9N80Q
MOSFET N-CH 800V 9A TO-268
- Manufacturer
- IXYS
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 800V 9A TO-268
Product Details
- FET Feature
- Depletion Mode
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.5Ohm @ 5A, 10V
- Series
- -
- Power Dissipation (Max)
- 695W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-268
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 200nC @ 5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 1000V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5320pF @ 25V