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IXYS IXKC19N60C5
MOSFET N-CH 600V 19A ISOPLUS220
- Manufacturer
- IXYS
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 600V 19A ISOPLUS220
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2800pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 31A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 3.5V @ 1.2mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 105mOhm @ 18A, 10V
- Series
- Automotive, AEC-Q101, CoolMOS™
- Power Dissipation (Max)
- 255W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO247-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 80nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 600V