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IXYS IXTH12N100L

MOSFET N-CH 1000V 12A TO-247

Manufacturer
IXYS
Datasheet
Price
0.2
Stock
10000
Description
MOSFET N-CH 1000V 12A TO-247

Product Details

Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
200mOhm @ 22A, 10V
Series
HiPerFET™, PolarHT™
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
Supplier Device Package
ISOPLUS247™
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
200nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
800V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
12000pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vgs(th) (Max) @ Id
5V @ 8mA