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IXYS IXTH32P20T

MOSFET P-CH 200V 32A TO-247

Manufacturer
IXYS
Datasheet
Price
0.2
Stock
10000
Description
MOSFET P-CH 200V 32A TO-247

Product Details

Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
65mOhm @ 24A, 10V
Series
-
Power Dissipation (Max)
379W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-247AD
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
225nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
600V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
4854pF @ 100V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4V @ 250µA