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IXYS IXTL2N470
MOSFET N-CH
- Manufacturer
- IXYS
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH
Product Details
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 161nC @ 20V
- Vgs (Max)
- +20V, -5V
- Drain to Source Voltage (Vdss)
- 1200V
- Technology
- SiC (Silicon Carbide Junction Transistor)
- Input Capacitance (Ciss) (Max) @ Vds
- 2790pF @ 1000V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 68A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Vgs(th) (Max) @ Id
- 4V @ 15mA
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 34mOhm @ 50A, 20V
- Series
- -
- Power Dissipation (Max)
- -
- FET Type
- N-Channel
- Supplier Device Package
- SOT-227B