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IXYS IXTM5N100A
POWER MOSFET TO-3
- Manufacturer
- IXYS
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- POWER MOSFET TO-3
Product Details
- Rds On (Max) @ Id, Vgs
- 25mOhm @ 33.5A, 10V
- Series
- GigaMOS™
- Power Dissipation (Max)
- 300W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-204AE
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 260nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4500pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 67A (Tc)
- Part Status
- Last Time Buy
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-204AE
- Vgs(th) (Max) @ Id
- 4V @ 4mA
- Operating Temperature
- -55°C ~ 150°C (TJ)