IXYS IXTP80N10T

Product Details

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

100nC @ 5V

Vgs (Max)

±15V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4900pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

5V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

25mOhm @ 25A, 5V

Series

-

Power Dissipation (Max)

2.5W (Ta), 125W (Tc)

FET Type

P-Channel

Supplier Device Package

D2PAK