Images are for reference only. See Product Specifications for product details

IXYS IXTY3N60P

MOSFET N-CH 600V 3A D-PAK

Manufacturer
IXYS
Datasheet
Price
0.2
Stock
10000
Description
MOSFET N-CH 600V 3A D-PAK

Product Details

Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
600V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
411pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
5.5V @ 50µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
2.9Ohm @ 500mA, 10V
Series
PolarHV™
Power Dissipation (Max)
70W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220AB
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
9.8nC @ 10V