IXYS IXYN100N65C3H1

Product Details

Technology

GaNFET (Gallium Nitride)

Input Capacitance (Ciss) (Max) @ Vds

90pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1.7A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

5V

Mounting Type

Surface Mount

Package / Case

Die

Vgs(th) (Max) @ Id

2.5V @ 600µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

65mOhm @ 1A, 5V

Series

eGaN®

Power Dissipation (Max)

-

FET Type

N-Channel

Supplier Device Package

Die

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

0.91nC @ 5V

Vgs (Max)

+6V, -4V

Drain to Source Voltage (Vdss)

100V