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IXYS MCB60I1200TZ

1200V 90A SIC POWER MOSFET

Manufacturer
IXYS
Datasheet
Price
0.2
Stock
10000
Description
1200V 90A SIC POWER MOSFET

Product Details

Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
75V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
14400pF @ 37.5V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
3.8V @ 273µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
2.3mOhm @ 100A, 10V
Series
OptiMOS™ 3
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
Supplier Device Package
PG-TO220-3
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
206nC @ 10V