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IXYS-RF IXFK21N100F
MOSFET N-CH 1000V 21A TO264
- Manufacturer
- IXYS-RF
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 390mOhm @ 12A, 10V
- Series
- HiPerRF™
- Power Dissipation (Max)
- 560W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-264 (IXFK)
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 195nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 1000V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6600pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 24A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-264-3, TO-264AA
- Vgs(th) (Max) @ Id
- 5.5V @ 8mA
- Operating Temperature
- -55°C ~ 150°C (TJ)