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IXYS-RF IXFN24N100F

MOSFET N-CH 1000V 24A SOT227B

Manufacturer
IXYS-RF
Datasheet
Price
0
Stock
0

Product Details

Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
5.5V @ 4mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
500mOhm @ 10.5A, 10V
Series
HiPerRF™
Power Dissipation (Max)
500W (Tc)
FET Type
N-Channel
Supplier Device Package
PLUS247™-3
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
160nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
1000V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
5500pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
21A (Tc)