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IXYS T-TD1R4N60P 11
MOSFET N-CH 600V
- Manufacturer
- IXYS
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 600V
Product Details
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 4.5V
- Vgs (Max)
- ±5V
- Drain to Source Voltage (Vdss)
- 8V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 9A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 1.2V, 4.5V
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® TSC-75-6
- Vgs(th) (Max) @ Id
- 700mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 34mOhm @ 3A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 2.4W (Ta), 13W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® TSC75-6