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IXYS T-TD1R4N60P 11

MOSFET N-CH 600V

Manufacturer
IXYS
Datasheet
Price
0.2
Stock
10000
Description
MOSFET N-CH 600V

Product Details

Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Vgs (Max)
±5V
Drain to Source Voltage (Vdss)
8V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
PowerPAK® TSC-75-6
Vgs(th) (Max) @ Id
700mV @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
34mOhm @ 3A, 4.5V
Series
TrenchFET®
Power Dissipation (Max)
2.4W (Ta), 13W (Tc)
FET Type
P-Channel
Supplier Device Package
PowerPAK® TSC75-6