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Micron Technology Inc. MT41K512M8V00HWC1

IC DRAM 4G PARALLEL DIE

Manufacturer
Micron Technology Inc.
Datasheet
Price
10.73
Stock
100
Description
IC DRAM 4G PARALLEL DIE

Product Details

Series
-
Voltage - Supply
3.135V ~ 3.465V
Packaging
Tray
Operating Temperature
-40°C ~ 85°C (TA)
Technology
SRAM - Synchronous, SDR (ZBT)
Supplier Device Package
100-TQFP (14x14)
Access Time
8.5ns
Write Cycle Time - Word, Page
-
Memory Size
9Mb (256K x 36)
Memory Type
Volatile
Part Status
Active
Memory Format
SRAM
Mounting Type
Surface Mount
Package / Case
100-LQFP
Base Part Number
IDT71V65703
Memory Interface
Parallel