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Microsemi Corporation 66099
RF POWER TRANSISTOR
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- RF POWER TRANSISTOR
Product Details
- Series
- -
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 10mA, 70mA
- Packaging
- Digi-Reel®
- Current - Collector (Ic) (Max)
- 100mA
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 1µA
- Power - Max
- 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 50mA, 5V
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- 3-UFDFN
- Transistor Type
- NPN - Pre-Biased
- Base Part Number
- DDTC114
- Resistor - Base (R1)
- 10 kOhms
- Frequency - Transition
- 250MHz
- Supplier Device Package
- 3-DFN1006 (1.0x0.6)
- Resistor - Emitter Base (R2)
- 10 kOhms