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Microsemi Corporation APT100GT120JR
IGBT 1200V 123A 570W SOT227
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT 1200V 123A 570W SOT227
Product Details
- Series
- -
- Input Capacitance (Cies) @ Vce
- 3.15nF @ 25V
- IGBT Type
- Trench Field Stop
- Current - Collector Cutoff (Max)
- 250µA
- Part Status
- Active
- Voltage - Collector Emitter Breakdown (Max)
- 600V
- Power - Max
- 176W
- Configuration
- Asymmetrical Bridge
- Mounting Type
- Chassis Mount
- NTC Thermistor
- Yes
- Package / Case
- SP1
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Supplier Device Package
- SP1
- Vce(on) (Max) @ Vge, Ic
- 1.9V @ 15V, 50A
- Input
- Standard
- Current - Collector (Ic) (Max)
- 80A