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Microsemi Corporation APT45GR65SSCD10
INSULATED GATE BIPOLAR TRANSISTO
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- INSULATED GATE BIPOLAR TRANSISTO
Product Details
- IGBT Type
- NPT
- Current - Collector (Ic) (Max)
- 134A
- Packaging
- Bulk
- Current - Collector Pulsed (Icm)
- 260A
- Gate Charge
- 305nC
- Voltage - Collector Emitter Breakdown (Max)
- 650V
- Part Status
- Obsolete
- Power - Max
- 595W
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Test Condition
- 433V, 70A, 4.3Ohm, 15V
- Td (on/off) @ 25°C
- 19ns/170ns
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Supplier Device Package
- T-MAX™ [B2]
- Series
- *
- Vce(on) (Max) @ Vge, Ic
- 2.4V @ 15V, 70A