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Microsemi Corporation APT75GN120B2G
IGBT 1200V 200A 833W TMAX
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT 1200V 200A 833W TMAX
Product Details
- Gate Charge
- 168nC
- Current - Collector (Ic) (Max)
- 225A
- Part Status
- Active
- Current - Collector Pulsed (Icm)
- 460A
- Power - Max
- 830W
- Voltage - Collector Emitter Breakdown (Max)
- 650V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Test Condition
- 400V, 50A, 3Ohm, 15V
- Switching Energy
- 1.27mJ (on), 1.37mJ (off)
- Td (on/off) @ 25°C
- 29ns/150ns
- Series
- GenX3™, XPT™
- Operating Temperature
- -55°C ~ 175°C (TJ)
- IGBT Type
- PT
- Supplier Device Package
- PLUS247™-3
- Packaging
- Tube
- Vce(on) (Max) @ Vge, Ic
- 1.85V @ 15V, 70A
- Input Type
- Standard
- Reverse Recovery Time (trr)
- 156ns