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Microsemi Corporation APTGT75SK120T1G
IGBT 1200V 110A 357W SP1
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT 1200V 110A 357W SP1
Product Details
- Package / Case
- SP4
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Supplier Device Package
- SP4
- Vce(on) (Max) @ Vge, Ic
- 2.1V @ 15V, 50A
- Input
- Standard
- Current - Collector (Ic) (Max)
- 75A
- Series
- -
- Input Capacitance (Cies) @ Vce
- 3.6nF @ 25V
- IGBT Type
- Trench Field Stop
- Current - Collector Cutoff (Max)
- 250µA
- Part Status
- Obsolete
- Voltage - Collector Emitter Breakdown (Max)
- 1200V
- Power - Max
- 277W
- Configuration
- Half Bridge
- Mounting Type
- Chassis Mount
- NTC Thermistor
- Yes