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Microsemi Corporation APTGTQ100SK65T1G

POWER MODULE - IGBT

Manufacturer
Microsemi Corporation
Datasheet
Price
43.39
Stock
0

Product Details

Power - Max
208W
Configuration
Half Bridge
Mounting Type
Chassis Mount
NTC Thermistor
Yes
Package / Case
SP1
Operating Temperature
-40°C ~ 150°C (TJ)
Supplier Device Package
SP1
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 35A
Input
Standard
Current - Collector (Ic) (Max)
55A
Series
-
Input Capacitance (Cies) @ Vce
2.5nF @ 25V
IGBT Type
Trench Field Stop
Current - Collector Cutoff (Max)
250µA
Part Status
Active
Voltage - Collector Emitter Breakdown (Max)
1200V